S8055R参数：单向可控硅It(rms)=35A,Vdrm=800V
参数 数值
di/dt @ 110°C (A/μs) 175
dv/dt @ 125°C (V/μs) 475
IDRM@VDRM 125°C (mA) 3
IDRM@VDRM 25°C (mA) 0.02
Max Gate Trigger Current (IGTMAX) (μA) 40000
On-State Current (Itrms) (A) 55
Non-Repetitive Surge Current (ITSM 60Hz) (A) 650
Package Size TO-220 Non-Isolated Tab
TGT (μs) 2.5
Tq(μs) 35
Repetitive Peak Off-State Voltage (VDRM) (V) 800
VTM (V) 1.8