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产品型号 | M57959L-01R | 品牌 | MITSUBISHI | 封装 | SIP12 | 价格 | 电询 | 描述 | IGBT驱动 | 查看资料 | M57959L-01R | |
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产品说明
M57959L-01R Hybrid Integrated CircuitFor Driving IGBT ModulesDescription:M57959L is a hybrid integratedcircuit designed for driving n-channelIGBT modules in any gate amplifierapplication. This device operatesas an isolation amplifier for thesemodules and provides the requiredelectrical isolation between the in-put and output with an opto-coupler.Short circuit protection is providedby a built in desaturation detector.A fault signal is provided if theshort circuit protection is activated IGBT是一种由双极晶体管与MOSFET组合的器件,既具有MOSFET的栅极电压控制快速开关特性,又具有双极晶体管大电流处理能力和低饱和压降,当控制电路使EXB841 输入端脚14 和脚15 有 10mA 的电流流过时,光耦合器 IS0l 就会导通, A 点电位迅速下降至 0V ,使 V1 和 V 2 截止; V 2 截止使 D 点电位上升
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